| PART |
Description |
Maker |
| ATF13284 |
1-16 Ghz Low Noise Gallium Arsenide FET
|
Agilent Technologies
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器
GT 8C 2#0 6#12 PIN PLUG
280 GHz GaAs MMIC Low Noise Amplifier
28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
ALPHA[Alpha Industries]
http://
|
| TLA-8-2015 TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
|
| CLA-18-6007 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
